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| SII100N06 NPT IGBT Modules Dimensions in mm (1mm = 0.0394") Absolute Maximum Ratings Symbol Conditions TC = 25oC, unless otherwise specified Values 600 130(100) 200 445 _ +20 100 200 1.25 2500 Units V A A W V A A As V 2 IGBT Wechselrichter/ IGBT Inverter VCES IC TC= 25(70)oC ICRM TC= 70oC, tP =1ms Ptot TC= 25oC, Tvj= 150oC VGES Diode Wechselrichter/ Diode Inverter IF IFRM 2 tP =1ms VR=0V, tP =10ms; TVj=125oC It Module Isolation/ Module Isolation VISOL RMS, f=50Hz, t=1min, NTC connect to Baseplate Sirectifier R SII100N06 NPT IGBT Modules Characteristics Symbol Conditions IGBT Wechselrichter/ IGBT Inverter VGEth VGE = VCE, IC =1.5mA ICES VGE = 0; VCE = 600V, Tj = 25(125)oC IGES VCE=0; VGE=20V VCE(sat) Cies Cres LCE Isc TC = 25oC, unless otherwise specified min. 4.5 typ. 5.5 1(1000) max. 6.5 500 400 Units V uA nA V nF nH A IC =100A; VGE = 15V; Tj = 25(125)oC under following conditions VGE = 0, VCE = 25V, f = 1MHz tP 10uS, VGE 15V, Tvj = 125 C , Vcc = 360V under following conditions: VCC = 300V, IC = 100A RGon = RGoff =2.2 , , Tj = 25(125)oC VGE = 15V Tj = 25(125)oC, LS = 15nH o 1.95(2.2) 2.45(-) 4.3 0.4 40 450 td(on) tr td(off) tf Eon(Eoff) RCC'+EE' 25(26) 10(11) 130(150) 20(30) 1.0(2.9) 1.0 0.28 ns ns ns ns mJ m K/W RthJC Diode Wechselrichter/ Diode Inverter under following condition VF IF = 100A; VGE = 0V; Tj = 25(125)oC IRM IF = 100A; Tj = 25(125)oC Qr -di/dt = 4400A/us Erec VGE = -10V, VR=300V RthJC RthCK TVJ TVJM Tstg 1.25(1.2) 150(180) 7.7(13) -(3.2) 0.03 -40...+125 150 -40...+125 1.6(-) V A uC mJ K/W o 0.5 C Mechanical Data Ms to heatsink M6 Mt to terminals M5 w 3 2.5 5 5 160 Nm Nm g Sirectifier R SII100N06 NPT IGBT Modules Sirectifier R SII100N06 NPT IGBT Modules Sirectifier R |
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